@article {Lee:1 January 2002:1058-4587:275, author = "Lee W-J.", author = "Shin W-C.", author = "Chae B-G.", author = "Ryu S-O.", author = "You I-K.", author = "Cho S.M.", author = "Yu B-G.", author = "Shin B-C.", title = "Electrical Properties of Dielectric and Ferroelectric Films Prepared by Plasma Enhanced Atomic Layer Deposition", journal = "Integrated Ferroelectrics", volume = "46", year = "1 January 2002", abstract = "High dielectric SrTa2O6 films and ferroelectric SBT films were prepared by alternating supply of sources and O2 plasma for PEALD process. It was observed that the uniform and conformal thin films were successfully deposited using PEALD. The dielectric constants and the dissipation factors of Pt/STO/Pt structures showed slight increase up to 700°C and a considerable increase in STO annealed at 800°C. The leakage current density of a 40nm-STO film was about 5×10-8A/cm2 at 3V. The STO MOS capacitors shows a good interface states with efficiently low fixed charge and interface trapped charge. These electrical properties support the possibility of STO oxide application to a new high-k gate dielectric. PEALD-SBT films annealed at 750°C in O2 showed typical ferroelectric property. The remanent polarization (Pr) of a 100nm-SBT film is about 4muC/cm2 at 5V-sweep voltage and the fatigue-free property after 1×1011 cycles was observed.", pages = "275-284(10)", url = "http://www.ingentaconnect.com/content/tandf/ginf/2002/00000046/00000001/art00031" }