@article {M.H.:March 2005:0268-1242:L5,
	author = "M.H. Kane",
	author = "A. Asghar",
	author = "C.R. Vestal",
	author = "M. Strassburg",
	author = "J. Senawiratne",
	author = "Z.J. Zhang",
	author = "N. Dietz",
	author = "C.J. Summers",
	author = "I.T. Ferguson",
	title = "Magnetic and optical properties of Ga1-xMnxN grown by metalorganic chemical vapour deposition",
	journal = "Semiconductor Science and Technology",
	volume = "20",
	year = "March 2005",
	abstract = "Epitaxial layers of Ga<SUB>1-<I>x</I></SUB>Mn<SUB><I>x</I></SUB>N with concentrations of up to <I>x</I> = 0.015 have been grown on c-sapphire substrates by metalorganic chemical vapour deposition. No ferromagnetic second phases were detected via high-resolution x-ray diffraction. Crystalline quality and surface structure were measured by x-ray diffraction and atomic force microscopy, respectively. No significant deterioration in crystal quality and no increase in surface roughness with the incorporation of Mn were detected. Optical measurements show a broad emission band attributed to a Mn-related transition at 3.0 eV that is not seen in the underlying GaN virtual substrate layers. Room temperature ferromagnetic hysteresis has been observed in these samples, which may be due to either Mn-clustering on the atomic scale or the Ga<SUB>1-<I>x</I></SUB>Mn<SUB><I>x</I></SUB>N bulk alloy.",
	pages = "L5-L9(1)",
	url = "http://www.ingentaconnect.com/content/iop/sst/2005/00000020/00000003/art00l02"
	doi = "doi:10.1088/0268-1242/20/3/L02"
}