@article {Liu:April 2006:1555-130X:114,
	author = "Liu, Chun",
	author = "Hu, Zheng",
	author = "Wu, Qiang",
	author = "Wang, Xizhang",
	author = "Chen, Yi",
	author = "Zhu, Jianmin",
	title = "Controllable Synthesis of One-Dimensional Aluminum Nitride Nanostructures Through Vapor-Solid Epitaxial Growth",
	journal = "Journal of Nanoelectronics and Optoelectronics",
	volume = "1",
	year = "April 2006",
	abstract = "Controllable synthesis of the nanostructures of group III nitrides is an important topic for potential applications in semiconductor nanotechnology due to their promising optical and electrical properties. In this article, different quasi-aligned one-dimensional AlN nanostructures, including columnar flowers, nanocolumns, and nanocones, have been selectively synthesized via catalyst-assisted vapor-solid epitaxial growth on Co-deposited quartz plate through the reaction between AlCl<SUB>3</SUB> vapor and NH<SUB>3</SUB>. The as-prepared hexagonal AlN products grow preferentially along the <I>c</I>-axis, the extent of which depends on the synthetic conditions. The growth mechanism is discussed based on the correlation among the reaction temperature, AlCl<SUB>3</SUB> vapor pressure, and the morphologies of the products.",
	pages = "114-118(5)",
	url = "http://www.ingentaconnect.com/content/asp/jno/2006/00000001/00000001/art00014"
	doi = "doi:10.1166/jno.2006.014"
}